MOSFET, N, DIRECTFET, MX; Transistor Polarity:N Channel; Continuous Drain Current Id:19A; Drain Source Voltage Vds:40V; On Resistance Rds(on):4.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power Dissipation Pd:2.8W; Transistor Case Style:DirectFET MX; No. of Pins:7; Operating Tem
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 19A (Ta), 106A (Tc)
Rds On (Max) @ Id, Vgs 5 mOhm @ 19A, 10V
Vgs(th) (Max) @ Id 2.25V @ 250µA
Gate Charge (Qg) @ Vgs 44nC @ 4.5V
Input Capacitance (Ciss) @ Vds 3765pF @ 20V
Power - Max 2.8W
Mounting Type Surface Mount
Package / Case -