Transistor: N-MOSFET; unipolar; HEXFET; 200V; 9.5A
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 9.3A (Tc)
Rds On (Max) @ Id, Vgs 300 mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 35nC @ 10V
Input Capacitance (Ciss) @ Vds 575pF @ 25V
Power - Max 82W
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB