Transistor: P-MOSFET; unipolar; HEXFET; -150V; -27
Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 150V
Current - Continuous Drain (Id) @ 25°C 27A (Tc)
Rds On (Max) @ Id, Vgs 150 mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) @ Vgs 110nC @ 10V
Input Capacitance (Ciss) @ Vds 2210pF @ 25V
Power - Max 250W
Mounting Type Through Hole
Package / Case TO-220-3