MOSFET, DUAL, N, TSOP-6; Transistor Polarity:N Channel; Continuous Drain Current Id:2.7A; Drain Source Voltage Vds:20V; On Resistance Rds(on):90mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.25V; Power Dissipation Pd:960mW; Transistor Case Style:TSOP; No. of Pins:6; Operating Temperatu
Specification
FET Type 2 N-Channel (Dual)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 2.7A
Rds On (Max) @ Id, Vgs 90 mOhm @ 2.7A, 4.5V
Vgs(th) (Max) @ Id 1.25V @ 250µA
Gate Charge (Qg) @ Vgs 6nC @ 4.5V
Input Capacitance (Ciss) @ Vds 400pF @ 15V
Power - Max 960mW
Mounting Type Surface Mount
Package / Case 6-TSOP (0.059", 1.50mm Width)