Transistor: P-MOSFET; unipolar; -20V; -4A; 2W; TSO
Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 4A (Ta)
Rds On (Max) @ Id, Vgs 86 mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250µA
Gate Charge (Qg) @ Vgs 11.4nC @ 4.5V
Input Capacitance (Ciss) @ Vds 594pF @ 15V
Power - Max 2W
Mounting Type Surface Mount
Package / Case 6-TSOP (0.059", 1.50mm Width)