Transistor: N-MOSFET; unipolar; HEXFET; 24V; 429A;
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 24V
Current - Continuous Drain (Id) @ 25°C 240A (Tc)
Rds On (Max) @ Id, Vgs 1 mOhm @ 160A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 252nC @ 10V
Input Capacitance (Ciss) @ Vds 7700pF @ 19V
Power - Max 300W
Mounting Type Surface Mount
Package / Case TO-263-7, D²Pak (6 Leads + Tab), TO-263CB