Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 100A
Rds On (Max) @ Id, Vgs 1.98 mOhm @ 90A, 10V
Vgs(th) (Max) @ Id 3.9V @ 100µA
Gate Charge (Qg) @ Vgs 155nC @ 10V
Input Capacitance (Ciss) @ Vds 5171pF @ 25V
Power - Max 163W
Mounting Type Through Hole
Package / Case TO-251-3 Long Leads, IPak, TO-251AB