Transistor: N-MOSFET; unipolar; 60V; 21A; 30W; Dir
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 5.8A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs 36 mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 5V @ 25µA
Gate Charge (Qg) @ Vgs 11nC @ 10V
Input Capacitance (Ciss) @ Vds 450pF @ 25V
Power - Max 2.4W
Mounting Type Surface Mount
Package / Case -