Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 38A (Tc)
Rds On (Max) @ Id, Vgs 60 mOhm @ 38A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 230nC @ 10V
Input Capacitance (Ciss) @ Vds 2780pF @ 25V
Power - Max 3.1W
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB