Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 13A (Tc)
Rds On (Max) @ Id, Vgs 78 mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 4V @ 12µA
Gate Charge (Qg) @ Vgs 11nC @ 10V
Input Capacitance (Ciss) @ Vds 716pF @ 50V
Power - Max 31W
Mounting Type Through Hole
Package / Case TO-251-3 Long Leads, IPak, TO-251AB