MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:650V; On Resistance Rds(on):125mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:208W; Transistor Case Style:TO-220; No. of Pins:3; Operating Temperature Max:1
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 25A (Tc)
Rds On (Max) @ Id, Vgs 125 mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 3.5V @ 1.1mA
Gate Charge (Qg) @ Vgs 70nC @ 10V
Input Capacitance (Ciss) @ Vds 2500pF @ 100V
Power - Max 208W
Mounting Type Through Hole
Package / Case TO-220-3