Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Rds On (Max) @ Id, Vgs 3.7 mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 2.2V @ 45µA
Gate Charge (Qg) @ Vgs 75nC @ 10V
Input Capacitance (Ciss) @ Vds 5100pF @ 25V
Power - Max 94W
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA