Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 16A (Tc)
Rds On (Max) @ Id, Vgs 199 mOhm @ 9.9A, 10V
Vgs(th) (Max) @ Id 3.5V @ 660µA
Gate Charge (Qg) @ Vgs 43nC @ 10V
Input Capacitance (Ciss) @ Vds 1520pF @ 100V
Power - Max 139W
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA