Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Rds On (Max) @ Id, Vgs 9.2 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2V @ 20µA
Gate Charge (Qg) @ Vgs 13nC @ 5V
Input Capacitance (Ciss) @ Vds 1642pF @ 15V
Power - Max 63W
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA