Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Rds On (Max) @ Id, Vgs 3 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.5V @ 275µA
Gate Charge (Qg) @ Vgs 206nC @ 10V
Input Capacitance (Ciss) @ Vds 14800pF @ 50V
Power - Max 300W
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA