MOSFET; Transistor Polarity:P Channel; Continuous Drain Current Id:-90A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0033ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.5V; Power Dissipation Pd:137W; Transistor Case Style:TO-252; No. of Pins:3; Operating Temperature Max:175°
Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 90A (Tc)
Rds On (Max) @ Id, Vgs 4.1 mOhm @ 90A, 10V
Vgs(th) (Max) @ Id 2V @ 253µA
Gate Charge (Qg) @ Vgs 160nC @ 10V
Input Capacitance (Ciss) @ Vds 11300pF @ 25V
Power - Max 137W
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63