Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Rds On (Max) @ Id, Vgs 200 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 1mA
Gate Charge (Qg) @ Vgs -
Input Capacitance (Ciss) @ Vds 600pF @ 25V
Power - Max 40W
Mounting Type Through Hole
Package / Case TO-220-3