MV POWER MOS; Transistor Polarity:N Channel; Continuous Drain Current Id:15.2A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.077ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:62.5W; Transistor Case Style:TSDSON; No. of Pins:8; Operating Temperature Max:15
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 15.2A (Tc)
Rds On (Max) @ Id, Vgs 90 mOhm @ 7.6A, 10V
Vgs(th) (Max) @ Id 4V @ 30µA
Gate Charge (Qg) @ Vgs 11.6nC @ 10V
Input Capacitance (Ciss) @ Vds 920pF @ 100V
Power - Max 62.5W
Mounting Type Surface Mount
Package / Case 8-PowerTDFN