MOSFET, N CH, 40A, 40V, PG-TSDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:40V; On Resistance Rds(on):8.1mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.2V; Power Dissipation Pd:35W; Transistor Case Style:PG-TSDSON; No. of Pins:8; Operat
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 12A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs 9.7 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2V @ 14µA
Gate Charge (Qg) @ Vgs 24nC @ 10V
Input Capacitance (Ciss) @ Vds 1900pF @ 20V
Power - Max 35W
Mounting Type Surface Mount
Package / Case 8-PowerTDFN