Specification
FET Type 2 N-Channel (Dual)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 2.6A
Rds On (Max) @ Id, Vgs 150 mOhm @ 2.6A, 4.5V
Vgs(th) (Max) @ Id 2V @ 20µA
Gate Charge (Qg) @ Vgs 20nC @ 10V
Input Capacitance (Ciss) @ Vds 380pF @ 25V
Power - Max 2W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)