Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 9.4A (Ta), 63A (Tc)
Rds On (Max) @ Id, Vgs 15.2 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 72µA
Gate Charge (Qg) @ Vgs 29nC @ 10V
Input Capacitance (Ciss) @ Vds 1900pF @ 50V
Power - Max 114W
Mounting Type Surface Mount
Package / Case 8-PowerTDFN