MOSFET, N-CH, 60V, 50A, 8TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0078ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power Dissipation Pd:50W; Transistor Case Style:SuperSOT; No. of Pins:8; Operating
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 12A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs 10 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.2V @ 23µA
Gate Charge (Qg) @ Vgs 45nC @ 10V
Input Capacitance (Ciss) @ Vds 3500pF @ 30V
Power - Max 50W
Mounting Type Surface Mount
Package / Case 8-PowerTDFN