Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 19A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs 4.6 mOhm @ 50A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 110µA
Gate Charge (Qg) @ Vgs 27.6nC @ 4.5V
Input Capacitance (Ciss) @ Vds 4100pF @ 10V
Power - Max 48W
Mounting Type Surface Mount
Package / Case 8-PowerTDFN