Transistors - Bipolar (BJT) -Single & Arrays,NPN - Pre-Biased,250mW
Specification
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 20mA
Current - Collector Cutoff (Max) -
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 20mA, 5V
Power - Max 250mW
Frequency - Transition 140MHz
Mounting Type Surface Mount
Package / Case SOT-723