Specification
FET Type N-Channel
Voltage - Breakdown (V(BR)GSS) 30V
Drain to Source Voltage (Vdss) -
Current - Drain (Idss) @ Vds 20mA @ 15V
Current Drain (Id) -
Voltage - Cutoff (VGS off) @ Id 2V @ 4nA
Power - Max 350mW
Input Capacitance (Ciss) @ Vds 18pF @ 10V (VGS)
Resistance - RDS(On) 40 Ohm
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)