Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 50V
Current - Continuous Drain (Id) @ 25°C 14A (Tc)
Rds On (Max) @ Id, Vgs 100 mOhm @ 14A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 40nC @ 20V
Input Capacitance (Ciss) @ Vds 570pF @ 25V
Power - Max 48W
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA