Specification
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 12V
Frequency - Transition 2GHz
Noise Figure @ f 5dB @ 200MHz
Gain 15dB
Power - Max 350mW
DC Current Gain (hFE) @ Ic, Vce 25 @ 3mA, 1V
Current - Collector (Ic) (Max) 50mA
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads