MOSFET, DUAL, NN, LOGIC, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:3.7A; Drain Source Voltage Vds:30V; On Resistance Rds(on):80mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; Operating Temperat
Specification
FET Type 2 N-Channel (Dual)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 3.7A
Rds On (Max) @ Id, Vgs 80 mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id 2.8V @ 250µA
Gate Charge (Qg) @ Vgs 27nC @ 10V
Input Capacitance (Ciss) @ Vds 320pF @ 10V
Power - Max 900mW
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)