Specification
FET Type N and P-Channel
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 3A, 2.8A
Rds On (Max) @ Id, Vgs 125 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id -
Gate Charge (Qg) @ Vgs 27nC @ 10V
Input Capacitance (Ciss) @ Vds 525pF @ 10V
Power - Max 900mW
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)