Specification
FET Type 2 P-Channel (Dual)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 2.8A
Rds On (Max) @ Id, Vgs 140 mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) @ Vgs 8.5nC @ 4.5V
Input Capacitance (Ciss) @ Vds 405pF @ 10V
Power - Max 900mW
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)