P CHANNEL MOSFET, -60V, -3A, SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):150mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.6V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; Operating
Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 3A (Ta)
Rds On (Max) @ Id, Vgs 150 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) @ Vgs 22nC @ 10V
Input Capacitance (Ciss) @ Vds 732pF @ 30V
Power - Max 1W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Buying Option 1
1
-
INR 598.41
10
-
INR 468.48
100
-
INR 301.95
1000
-
INR 241.56
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 598.41
Buying Option 2
1
-
INR 204.35
2500
-
INR 204.35
5000
-
INR 196.42
7500
-
INR 192.15
12500
-
INR 183
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Order Multiple:1
Price : 204.35
Buying Option 3
1
-
INR 561.2
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Order Multiple:1
Price : 561.2