Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 850mA (Ta)
Rds On (Max) @ Id, Vgs 350 mOhm @ 1A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) @ Vgs 4nC @ 5V
Input Capacitance (Ciss) @ Vds 125pF @ 10V
Power - Max 460mW
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3