Transistors - Bipolar (BJT) -Single & Arrays,NPN,1.2A,40V
Specification
Transistor Type NPN
Current - Collector (Ic) (Max) 1.2A
Voltage - Collector Emitter Breakdown (Max) 40V
Vce Saturation (Max) @ Ib, Ic 950mV @ 100mA, 1A
Current - Collector Cutoff (Max) -
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 100mA, 1V
Power - Max 1W
Frequency - Transition 250MHz
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body