Junction Field Effect Transistors,50V,100mW
Specification
FET Type N-Channel
Voltage - Breakdown (V(BR)GSS) 50V
Drain to Source Voltage (Vdss) -
Current - Drain (Idss) @ Vds 1.2mA @ 10V
Current Drain (Id) -
Voltage - Cutoff (VGS off) @ Id 400mV @ 100nA
Power - Max 100mW
Input Capacitance (Ciss) @ Vds 8.2pF @ 0V
Resistance - RDS(On) -
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)