Transistors - Bipolar (BJT) -Single & Arrays,NPN,10A,500V
Specification
Transistor Type NPN
Current - Collector (Ic) (Max) 10A
Voltage - Collector Emitter Breakdown (Max) 500V
Vce Saturation (Max) @ Ib, Ic 1V @ 800mA, 4A
Current - Collector Cutoff (Max) -
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 800mA, 5V
Power - Max 90W
Frequency - Transition 18MHz
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3