Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 770mA (Ta)
Rds On (Max) @ Id, Vgs 1.5 Ohm @ 390mA, 5V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) @ Vgs 9nC @ 5V
Input Capacitance (Ciss) @ Vds 240pF @ 25V
Power - Max 1.8W
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA