Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 250V
Current - Continuous Drain (Id) @ 25°C 6.2A (Tc)
Rds On (Max) @ Id, Vgs 550 mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) @ Vgs 15nC @ 10V
Input Capacitance (Ciss) @ Vds 530pF @ 25V
Power - Max 2.5W
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA