Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 250V
Current - Continuous Drain (Id) @ 25°C 3.1A (Tc)
Rds On (Max) @ Id, Vgs 2.1 Ohm @ 1.55A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) @ Vgs 14nC @ 10V
Input Capacitance (Ciss) @ Vds 420pF @ 25V
Power - Max 2.5W
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA