Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 400V
Current - Continuous Drain (Id) @ 25°C 2A (Tc)
Rds On (Max) @ Id, Vgs 6.5 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) @ Vgs 13nC @ 10V
Input Capacitance (Ciss) @ Vds 350pF @ 25V
Power - Max 63W
Mounting Type Through Hole
Package / Case TO-220-3