Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 9.3A (Tc)
Rds On (Max) @ Id, Vgs 210 mOhm @ 4.65A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) @ Vgs 6.1nC @ 5V
Input Capacitance (Ciss) @ Vds 280pF @ 25V
Power - Max 3.75W
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA