Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 800V
Current - Continuous Drain (Id) @ 25°C 4.8A (Tc)
Rds On (Max) @ Id, Vgs 2.6 Ohm @ 2.4A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) @ Vgs 33nC @ 10V
Input Capacitance (Ciss) @ Vds 1250pF @ 25V
Power - Max 3.13W
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA