Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Rds On (Max) @ Id, Vgs 360 mOhm @ 2A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 26nC @ 10V
Input Capacitance (Ciss) @ Vds 510pF @ 25V
Power - Max 12.8W
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3