MOSFET, N CH, 600V, 9.3OHM, 1A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:1A; Drain Source Voltage Vds:600V; On Resistance Rds(on):9.3ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:28W; Transistor Case Style:TO-252; No. of Pins:3; Operati
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 1A
Rds On (Max) @ Id, Vgs 11.5 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 6.2nC @ 10V
Input Capacitance (Ciss) @ Vds 170pF @ 25V
Power - Max 2.5W
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Buying Option 1
1
-
INR 431.88
10
-
INR 337.94
100
-
INR 218.38
1000
-
INR 174.46
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 431.88
Buying Option 2
1
-
INR 433.1
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 433.1