Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Rds On (Max) @ Id, Vgs 135 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 27nC @ 10V
Input Capacitance (Ciss) @ Vds 900pF @ 25V
Power - Max 2.5W
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63