Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 400V
Current - Continuous Drain (Id) @ 25°C 3.5A (Tc)
Rds On (Max) @ Id, Vgs 3.1 Ohm @ 1.75A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) @ Vgs 23nC @ 10V
Input Capacitance (Ciss) @ Vds 680pF @ 25V
Power - Max 3.13W
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB