MOSFET, N TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:100V; On Resistance Rds(on):40mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:127W; Transistor Case Style:TO-263; No. of Pins:3; Operating Temperature Max:175
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 33A (Tc)
Rds On (Max) @ Id, Vgs 52 mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 51nC @ 10V
Input Capacitance (Ciss) @ Vds 1500pF @ 25V
Power - Max 3.75W
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Buying Option 1
1
-
INR 401.99
10
-
INR 401.99
100
-
INR 368.44
500
-
INR 339.77
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 401.99
Buying Option 2
1
-
INR 768.6
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 768.6