Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 500V
Current - Continuous Drain (Id) @ 25°C 1.5A
Rds On (Max) @ Id, Vgs 10.5 Ohm @ 750mA, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) @ Vgs 14nC @ 10V
Input Capacitance (Ciss) @ Vds 350pF @ 25V
Power - Max 3.13W
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Buying Option 1
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INR 1256.6
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Order Multiple:1
Price : 1256.6