Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 900V
Current - Continuous Drain (Id) @ 25°C 6.4A (Tc)
Rds On (Max) @ Id, Vgs 1.9 Ohm @ 3A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) @ Vgs 52nC @ 10V
Input Capacitance (Ciss) @ Vds 1880pF @ 25V
Power - Max 198W
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3