MOSFET, P, TO-3P; Transistor Polarity:P Channel; Continuous Drain Current Id:-36A; Drain Source Voltage Vds:-150V; On Resistance Rds(on):90mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-4V; Power Dissipation Pd:294W; Transistor Case Style:TO-3P; No. of Pins:3; Operating Temperature Max:
Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 150V
Current - Continuous Drain (Id) @ 25°C 36A (Tc)
Rds On (Max) @ Id, Vgs 90 mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 105nC @ 10V
Input Capacitance (Ciss) @ Vds 3320pF @ 25V
Power - Max 294W
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Buying Option 1
1
-
INR 1854.4
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 1854.4
Buying Option 2
1
-
INR 988.2
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 988.2