Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 34A (Tc)
Rds On (Max) @ Id, Vgs 75 mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) @ Vgs 72nC @ 5V
Input Capacitance (Ciss) @ Vds 3900pF @ 25V
Power - Max 210W
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3